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Bottom-up graphene nanoribbon field-effect transistors

  • Author(s): Bennett, PB
  • Pedramrazi, Z
  • Madani, A
  • Chen, YC
  • De Oteyza, DG
  • Chen, C
  • Fischer, FR
  • Crommie, MF
  • Bokor, J
  • et al.

Published Web Location

https://doi.org/10.1063/1.4855116
Abstract

Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nano-scale chemically synthesized GNR field-effect transistors, made possible by development of a reliable layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1 nm width GNRs. © 2013 AIP Publishing LLC.

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