Charge Trap Transistor (CTT): An Embedded Fully Logic-Compatible Multiple-Time Programmable Non-Volatile Memory Element for High-k-Metal-Gate CMOS Technologies
- Author(s): Khan, Faraz
- et al.
Published Web Locationhttps://doi.org/10.1109/LED.2016.2633490
The availability of on-chip non-volatile memory for advanced high-k-metal-gate CMOS technology nodes has been limited due to integration and scaling challenges as well as operational voltage incompatibilities, while its need continues to grow rapidly in modern high-performance systems. By exploiting intrinsic device self-heating enhanced charge trapping in as fabricated high-k-metal-gate logic devices, we introduce a unique multipletime programmable embedded non-volatile memory element, called the ‘charge trap transistor’ (CTT), for high-k-metal-gate CMOS technologies. Functionality and feasibility of using CTT memory devices have been demonstrated on 22 nm planar and 14 nm FinFET technology platforms, including fully functional product prototype memory arrays. These transistor memory devices offer high density (∼0.144μm2/bit for 22 nm and ∼0.082μm2/bit for 14 nm technology), logic voltage compatible and low peak power operation (∼4mW), and excellent retention for a fully integrated and scalable embedded non-volatile memory without added process complexity or masks.
Many UC-authored scholarly publications are freely available on this site because of the UC Academic Senate's Open Access Policy. Let us know how this access is important for you.