Skip to main content
eScholarship
Open Access Publications from the University of California

Group III-V Nanowire Growth and Characterization

  • Author(s): Wang, Mingjin
  • Advisor(s): Bowers, John E
  • et al.
Abstract

Electronic and optical devices typically use bulk or quantum wells today, but nanowires are promising building blocks for future devices, due to their structural characterizations of larger aspect ratio and smaller volume. In situ growth of semiconductor devices is extremely attractive, as it doesn’t require expensive lithography treatment. Over the past ten years, a great deal of work has been done to explore NW, incorporation of group III-V materials and band engineering for the electronic and optoelectronic devices. Because pseudo one-dimensional heterostructures may be grown without involving lattice mismatch defects, NWs may give rise to superior electronic, photonic, and magnetic performances as compared to conventional bulk or planar structures.

Main Content
Current View