Wide Band Gap Single Wurtzite Ternary Alloy MgZnO Thin Film Grown by MBE
- Author(s): Chiang, Shyue-Shiun Ivan
- Advisor(s): Liu, Jianlin
- et al.
Ternary alloy MgZnO thin film on c-plane sapphire was obtained by radio-frequency (RF) plasma-assisted molecular beam epitaxy (MBE). The films were characterized by photoluminescence (PL), UV-visible absorption and X-ray diffraction (XRD). The band gap of ZnO based MgZnO ternary alloy thin film were be tuned from 3.71eV to 4.2eV at room temperature remaining single wurtzite structure. The band gap can be determined by Tauc plot of the absorption spectrum. High magnesium content ZnO based MgZnO ternary alloy thin films were achieved by controlling substrate temperature, cell temperature and buffer layer conditions. In this thesis we mainly investigated single wurtzite MgZnO ternary alloy as wide band gap ZnO based semiconductor material for fabricating optoelectronic devices.