UC Riverside

Lithographic device fabrication is a crucial part in the characterization of novel 1-and-2-dimensional (1D/2D) materials for electronic applications. In this defense, I will present patterns and devices tailored, respectively, to the seeded chemical vapor deposition (CVD) growth and characterization of MoWSeS alloys, tantalum triselenide (TaSe3) nanowires, and zirconium tritelluride (ZrTe3) nanoribbons. Patterning of silicon dioxide (300 nm) on silicon wafer pieces allows for predetermined channel width and height of subsequent devices on the deposited transition metal dichalcogenide (TMD) 2D films. Patterning of wafer pieces with 8 nm thick nickel metal deposition, allows for predetermined and predesignated TaSe3 nanowire growth for on-chip interconnections post-CVD growth. These nickel “waypoints” also serve as probe contact pads for facile and quick electrical characterization with minimal processing steps during device fabrication.