Correlation effects in the small gap semiconductor FeGa3
Published Web Locationhttps://doi.org/10.1088/1742-6596/200/1/012014
We report investigations of the effect of electron doping in FeGa 3 via electric resistivity, specific heat and magnetic susceptibility measurements in single crystals. FeGa3 is a non-magnetic small gap semiconductor (Δ ∼ 0.3-0.4 eV). Low concentration of Co in FeGa 3 induces a crossover to a metallic-like behavior, also creating weakly coupled local moments. Electronic specific heat and resistivity suggest a mass enhancement of charge carriers. Thus, the low carrier density metal formed by doping FeGa3 presents some physical properties that resemble heavy fermion metals. © 2010 IOP Publishing Ltd.