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Correlation effects in the small gap semiconductor FeGa3

  • Author(s): Bittar, EM
  • Capan, C
  • Seyfarth, G
  • Pagliuso, PG
  • Fisk, Z
  • et al.
Abstract

We report investigations of the effect of electron doping in FeGa3via electric resistivity, specific heat and magnetic susceptibility measurements in single crystals. FeGa3is a non-magnetic small gap semiconductor (Δ ∼ 0.3-0.4 eV). Low concentration of Co in FeGa3induces a crossover to a metallic-like behavior, also creating weakly coupled local moments. Electronic specific heat and resistivity suggest a mass enhancement of charge carriers. Thus, the low carrier density metal formed by doping FeGa3presents some physical properties that resemble heavy fermion metals. © 2010 IOP Publishing Ltd.

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