Correlation effects in the small gap semiconductor FeGa3
- Author(s): Bittar, EM
- Capan, C
- Seyfarth, G
- Pagliuso, PG
- Fisk, Z
- et al.
Published Web Locationhttps://doi.org/10.1088/1742-6596/200/1/012014
We report investigations of the effect of electron doping in FeGa3via electric resistivity, specific heat and magnetic susceptibility measurements in single crystals. FeGa3is a non-magnetic small gap semiconductor (Δ ∼ 0.3-0.4 eV). Low concentration of Co in FeGa3induces a crossover to a metallic-like behavior, also creating weakly coupled local moments. Electronic specific heat and resistivity suggest a mass enhancement of charge carriers. Thus, the low carrier density metal formed by doping FeGa3presents some physical properties that resemble heavy fermion metals. © 2010 IOP Publishing Ltd.
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