Correlation effects in the small gap semiconductor FeGa3
Abstract
We report investigations of the effect of electron doping in FeGa3via electric resistivity, specific heat and magnetic susceptibility measurements in single crystals. FeGa3is a non-magnetic small gap semiconductor (Δ ∼ 0.3-0.4 eV). Low concentration of Co in FeGa3induces a crossover to a metallic-like behavior, also creating weakly coupled local moments. Electronic specific heat and resistivity suggest a mass enhancement of charge carriers. Thus, the low carrier density metal formed by doping FeGa3presents some physical properties that resemble heavy fermion metals. © 2010 IOP Publishing Ltd.
Many UC-authored scholarly publications are freely available on this site because of the UC Academic Senate's Open Access Policy. Let us know how this access is important for you.