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Elastic properties of FeSi

  • Author(s): Sarrao, JL;
  • Mandrus, D;
  • Migliori, A;
  • Fisk, Z;
  • Bucher, E
  • et al.

Published Web Location

https://doi.org/10.1016/0921-4526(94)91875-9Creative Commons 'BY' version 4.0 license
Abstract

We present measurements of the complete elastic constants of single-crystal FeSi using resonant ultrasound spectroscopy (RUS). FeSi is a narrow-gap (0.05 eV) semiconductor whose physical properties are similar to a class of compounds known as hybridization gap semiconductors or Kondo insulators. The narrow gap is reflected in the temperature dependence of the elastic moduli. © 1994.

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