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Elastic properties of FeSi
Abstract
We present measurements of the complete elastic constants of single-crystal FeSi using resonant ultrasound spectroscopy (RUS). FeSi is a narrow-gap (0.05 eV) semiconductor whose physical properties are similar to a class of compounds known as hybridization gap semiconductors or Kondo insulators. The narrow gap is reflected in the temperature dependence of the elastic moduli. © 1994.
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