Temperature Dependence of Linked Gap and Surface State Evolution in the Mixed Valent Topological Insulator SmB6
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Temperature Dependence of Linked Gap and Surface State Evolution in the Mixed Valent Topological Insulator SmB6

  • Author(s): Denlinger, JD
  • Allen, JW
  • Kang, J-S
  • Sun, K
  • Kim, J-W
  • Shim, JH
  • Min, BI
  • Kim, D-J
  • Fisk, Z
  • et al.
Creative Commons Attribution 4.0 International Public License
Abstract

Taken together and viewed holistically, recent theory, low temperature (T) transport, photoelectron spectroscopy and quantum oscillation experiments have built a very strong case that the paradigmatic mixed valence insulator SmB6 is currently unique as a three-dimensional strongly correlated topological insulator (TI). As such, its many-body T-dependent bulk gap brings an extra richness to the physics beyond that of the weakly correlated TI materials. How will the robust, symmetry-protected TI surface states evolve as the gap closes with increasing T? For SmB6 exploiting this opportunity first requires resolution of other important gap-related issues, its origin, its magnitude, its T-dependence and its role in bulk transport. In this paper we report detailed T-dependent angle resolved photoemission spectroscopy (ARPES) measurements that answer all these questions in a unified way.

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