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Structure and electrical resistivity of CeNiSb3

  • Author(s): Macaluso, RT
  • Wells, DM
  • Sykora, RE
  • Albrecht-Schmitt, TE
  • Mar, A
  • Nakatsuji, S
  • Lee, H
  • Fisk, Z
  • Chan, JY
  • et al.

The ternary antimonide CeNiSb3 has been prepared from an Sb flux or from reaction of Ce, NiSb, and Sb above 1123K. It crystallizes in the orthorhombic space group Pbcm with Z=12 and lattice parameters a=12.6340(7)Å, b=6.2037(3)Å, and c=18.3698(9)Å at 193K. Its structure consists of buckled square nets of Sb atoms and layers of highly distorted edge- and face-sharing NiSb6 octahedra. Located between the ∞2[Sb] and ∞2[NiSb2] layers are the Ce atoms, in monocapped square antiprismatic coordination. There is an extensive network of Sb-Sb bonding with distances varying between 3.0 and 3.4Å. The structure is related to that of RECrSb3 but with a different stacking of the metal-centered octahedra. Resistivity measurements reveal a shallow minimum near 25K that is suggestive of Kondo lattice behavior, followed by a sharp decrease below 6K. © 2003 Elsevier Inc. All rights reserved.

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