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Suppression of the energy gap in SmB6 under pressure

  • Author(s): Beille, J
  • Maple, MB
  • Wittig, J
  • Fisk, Z
  • DeLong, LE
  • et al.
Abstract

The electrical resistance R of SmB6 as a function of temperature T and pressure P has been measured in the range 1 K<∼T<∼300 K and 0< 220 kbar. The behavior of R(T) changes continuously from that of a narrow gap semiconductor to that of a metal in the range of 0< 70 kbar. The dependence of R on T and P can be analyzed phenomenologically within the context of a thermal activation model with an activation energy that decreases linearly with pressure from 33 K at zero pressure to zero at 70 kbar. The data resemble those of SmS and SmSe under pressure and suggest a general behavior of R(T,P) for intermediate-valence Sm compounds. © 1983 The American Physical Society.

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