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Electronic doping and scattering by transition metals on graphene

  • Author(s): Pi, K
  • McCreary, KM
  • Bao, W
  • Han, W
  • Chiang, YF
  • Li, Y
  • Tsai, SW
  • Lau, CN
  • Kawakami, RK
  • et al.
Abstract

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular-beam epitaxy combined with in situ transport measurements. The room-temperature deposition of TM onto graphene produces clusters that dope n type for all TM investigated (Ti, Fe, and Pt). We also find that the scattering by TM clusters exhibits different behavior compared to 1/r Coulomb scattering. At high coverage, Pt films are able to produce doping that is either n type or weakly p type, which provides experimental evidence for a strong interfacial dipole favoring n -type doping as predicted theoretically. © 2009 The American Physical Society.

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