UC Santa Barbara

This paper presents the design and fabrication of piezoresistive cantilever probes for microwave impedance microscopy (MIM) to enable simultaneous topographic and electrical imaging. Plasma enhanced chemical vapor deposited Si3N4 cantilevers with a shielded center conductor line and nanoscale conductive tip apex are batch fabricated on silicon-on-insulator wafers. Doped silicon piezoresistors are integrated at the root of the cantilevers to sense their deformation. The piezoresistive sensitivity is 2 nm for a bandwidth of 10 kHz, enabling topographical imaging with reasonable speed. The aluminum center conductor has a low resistance (less than 5) and small capacitance (∼1.7 pF) to ground; these parameters are critical for high sensitivity MIM imaging. High quality piezoresistive topography and MIM images are simultaneously obtained with the fabricated probes at ambient and cryogenic temperatures. These new piezoresistive probes remarkably broaden the horizon of MIM for scientific applications by operating with an integrated feedback mechanism at low temperature and for photosensitive samples. © 2014 IOP Publishing Ltd.