Skip to main content
Localized states within the gap of Ce3Au3Sb4
Abstract
The temperature dependence of the specific heat and of the resistivity under pressure has been measured for single crystals of the semiconductor Ce3 Au3 Sb4. The transport data follow an exponential activation and variable range hopping at low T, consistent with weak disorder and localization, while C / T has a - ln T dependence with large entropy. Thus the properties of Ce3 Au3 Sb4 are very different from those of ordinary Kondo insulators. © 2007.
Many UC-authored scholarly publications are freely available on this site because of the UC's open access policies. Let us know how this access is important for you.