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Comparative study of the electronic structure of XRu2Si2: Probing the Anderson lattice

  • Author(s): Denlinger, JD
  • Gweon, GH
  • Allen, JW
  • Olson, CG
  • Maple, MB
  • Sarrao, JL
  • Armstrong, PE
  • Fisk, Z
  • Yamagami, H
  • et al.
Abstract

The k-resolved single particle excitations, as determined by angle-resolved photoemission spectroscopy (ARPES), are compared and contrasted for, LaRu2Si2, CeRu2Si2, ThRu2Si2, and URu2Si2, isostructural layered compounds with differing nominal f-occupations of f0, f1, f0, and f2, respectively. ARPES measurements include 4d and 5d-edge resonant photoemission to distinguish f-character and Fermi-energy intensity mapping of Fermi surface contours. Comparison to RLAPW band structure calculations shows very good agreement of the d-band structure away from EF. Discrepancies in the near EFregion highlight k-dependent effects of f-correlation and f-d hybridization. Approximately equal dimensions of Fermi contours for X=(La, Ce) suggest the exclusion of 4f electrons from the CeRu2Si2Fermi surface at temperatures far above the Kondo temperature. High-resolution spectra for X=(Ce, U) allow comparison of f-d mixing to predictions of the Anderson lattice model. Published by Elsevier Science B.V.

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