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Low-energy Ion-surface Interactions at Semiconductor and High-TC Superconductor Surfaces


Low-energy ion scattering is a powerful surface analysis technique for interrogating the structural and chemical makeup of a surface, as well as the electronic structure. We have used this technique to probe the local electrostatic potential of Bi2Sr2CaCu2O8, and corroborated the findings of density functional theory. Sputtering was conducted on this same material, revealing the formation of a Bi capping layer that prevents further damage, due to the low surface energy of unsputtered Bi. Finally, scattering was used to investigate charge exchange of the Si(111) surface as a function of doping, a fundamental study that revealed the bulk band gap has a strong effect on neutralization of scattered ions, despite the work function being unchanged with added dopants.

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