A GaN Differential Oscillator With Improved Harmonic Performance
- Author(s): Sanabria, Christopher
- Xu, Hongtao
- Heikman, Sten
- Mishra, Umesh K
- York, Robert A
- et al.
Published Web Locationhttp://ieeexplore.ieee.org/iel5/7260/31399/01458810.pdf?tp=&arnumber=1458810&isnumber=31399
The first AlGaN/GaN HEMT based differential oscillator is reported. The MMIC oscillates at a frequency of 4.16 GHz and provides 22.9 dBm of power from one side at a biasing of Vgs -1 V and Vds 20 V. The HEMTs each have a 0.7 um x 200 um gate. The second harmonic is 45 dB below the carrier and the third harmonic is more than 70 dB below the carrier. To our knowledge, this is the best reported harmonic performance for a GaN oscillator. The oscillator efficiency is between 4% and 9.4% depending on bias. The measured phase noise is -86.3 dBc and -115.7 dBc at offsets of 100 kHz and 1 MHz respectively. The phase noise at a 1 MHz offset is similar to the noise performance of FET based differential oscillators in other technologies.