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Electric field-tunable BaxSr12xTiO3 films with high figures of merit grown by molecular beam epitaxy


We report on the dielectric properties of BaxSr1xTiO3(BST) films grown by molecular beam epitaxy on epitaxial Pt bottom electrodes. Paraelectric films (x<0.5) exhibit dielectric losses that are similar to those of BST single crystals and ceramics. Films with device quality factors greater than 1000 and electric field tunabilities exceeding 1:5 are demonstrated. The results provide evidence for the importance of stoichiometry control and the use of a non-energetic deposition technique for achieving high figures of merit of tunable devices with BST thin films.

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