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Influence of Gate Separation on IGZO Thin Film Transistor Behavior

  • Author(s): Zhao, Zhiyu
  • Advisor(s): Yang, Yang
  • et al.
Abstract

Metal oxide are attracting great interests in the electronics field as a promising active layer

candidate for various uses including wearable sensors, flexible display, and LED displays. The

current status of manufacturing relies on cleanroom manufacturing, which can be time consuming

and costly. Consequently, a repeatable and reliable process to fabricate stable, large scale TFT is

needed for manufacturing and consumer’s need. Metal oxides have proven their values to be the

next generation display for their hi-performance electrical characteristic, abundance, and straight

forward fabrication method. In particular, system consists of Indium-Gallium-Zinc-Oxide (IGZO)

has demonstrated stability as well as high electrical performance. Science then, TFTs with IGZO

systems had prompt extensive research in the solution process field. Since the conventional method

are limited by sample size and processing time, solution-processing had opened gateway to more

flexible, even large-scale fabrication with way less steps and processing time. The major drawback

of solution processing the its instability, uncertainty, and weaker device performance comparing

to those fabricated in the cleanroom environment. In this work, several methods were investigated

including direct light patterning and UV and ozone treatment of sample surface to improve device

performance. A gallium rich IGZO solution TFT with 2:2:1 molar ratio was made with direct light

patterning method and compared to conventionally made IGZO TFT. It is shown that direct light

pattering could drastically enhance device stability and performances. Other factors such as cluster

size, interface treatment, and etchant composition could greatly affect the outcome as well.

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