Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs
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Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs

  • Author(s): Karcher, Armin
  • Bebek, Christopher J.
  • Kolbe, William F.
  • Maurath, Dominic
  • Prasad, Valmiki
  • Uslenghi, Michela
  • Wagner, Martin
  • et al.
Abstract

Lateral charge diffusion in back-illuminated CCDs directly affects the point spread function (PSF) and spatial resolution of an imaging device. This can be of particular concern in thick, back-illuminated CCDs. We describe a technique of measuring this diffusion and present PSF measurements for an 800x1100, 15 mu m pixel, 280 mu m thick, back-illuminated, p-channel CCD that can be over-depleted. The PSF is measured over a wavelength range of 450 nm to 650 nm and at substrate bias voltages between 6 V and 80 V.

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