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Pressure-induced quantum phase transitions in a YbB6 single crystal
- Zhou, Yazhou;
- Kim, Dae-Jeong;
- Rosa, Priscila Ferrari Silveira;
- Wu, Qi;
- Guo, Jing;
- Zhang, Shan;
- Wang, Zhe;
- Kang, Defen;
- Yi, Wei;
- Li, Yanchun;
- Li, Xiaodong;
- Liu, Jing;
- Duan, Peiquan;
- Zi, Ming;
- Wei, Xiangjun;
- Jiang, Zheng;
- Huang, Yuying;
- Yang, Yi-feng;
- Fisk, Zachary;
- Sun, Liling;
- Zhao, Zhongxian
- et al.
Abstract
We report the observation of two pressure-induced quantum phase transitions in a YbB6 single crystal, i.e., from a topologically trivial semiconductor to an intermediate semimetal and then from the semimetal to a possible topologically nontrivial high-pressure gapped phase through in situ high-pressure transport and synchrotron x-ray diffraction measurements. Our high-pressure absorption results reveal that the mixed-valence state in pressurized YbB6 above 15 GPa plays an important role in the formation of the high-pressure state with a reopened gap. These high-pressure results may be helpful for shedding light on the intriguing relation between the topology and the 4f electrons in the rare-earth hexaborides.
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