Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications
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Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications

  • Author(s): Cao, Y.
  • Zhang, J.
  • Li, X.
  • Kosel, T.H.
  • Fay, P.
  • Hall, D.C.
  • Zhang, X.B.
  • Dupuis, R.D.
  • Jasinski, J.B.
  • Liliental-Weber, Z.
  • et al.
Abstract

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

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