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Copper migration and surface oxidation of CuxBi2Se3 in ambient pressure environments
- Gross, Adam L;
- Falling, Lorenz;
- Staab, Matthew C;
- Montero, Metzli I;
- Ullah, Rahim R;
- Nisson, David M;
- Klavins, Peter;
- Koski, Kristie J;
- Curro, Nicholas J;
- Taufour, Valentin;
- Nemsak, Slavomir;
- Vishik, Inna M
Published Web Location
https://doi.org/10.1088/2515-7639/ac93b5Abstract
Chemical modifications such as intercalation can be used to modify surface properties or to further functionalize the surface states of topological insulators (TIs). Using ambient pressure x-ray photoelectron spectroscopy, we report copper migration in CuxBi2Se3 , which occurs on a timescale of hours to days after initial surface cleaving. The increase in near-surface copper proceeds along with the oxidation of the sample surface and large changes in the selenium content. These complex changes are further modeled with core-level spectroscopy simulations, which suggest a composition gradient near the surface which develops with oxygen exposure. Our results shed light on a new phenomenon that must be considered for intercalated TIs—and intercalated materials in general—that surface chemical composition can change when specimens are exposed to ambient conditions.
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