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Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy

  • Author(s): Misra, P
  • Behn, U
  • Brandt, O
  • Grahn, H T
  • Imer, B
  • Nakamura, S
  • DenBaars, S P
  • Speck, J S
  • et al.
Abstract

We use photoreflectance (PR) spectroscopy to study the electronic band structure modification of GaN films grown along different nonpolar orientations due to biaxial, anisotropic in-plane strain. The exciton transition energies of an unstrained, high-quality C-plane GaN film are used to accurately determine the crystal-field and spin-orbit splitting energies. For films with a nonpolar orientation, the resonant features observed in the PR spectra exhibit a strong in-plane polarization anisotropy and different transition energies from the ones measured in the C-plane GaN film. The deformation potential D-5 is accurately determined from four GaN films with a nonpolar orientation using the measured energies together with the polarization properties and out-of-plane strain. (c) 2006 American Institute of Physics.

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