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Effect of pressure on the electrical resistivity and magnetization of CeScGe

et al.

Published Web Location

https://doi.org/10.1016/s0921-4526(97)00101-4
Creative Commons 'BY' version 4.0 license
Abstract

Measurement of the magnetization up to H = 30 T at 4.2 K, temperature dependence of magnetic susceptibility and effect of pressure on the electrical resistivity on CeScGe are presented. These results indicate that CeScGe is antiferromagnetic with TN = 46 K. The Néel temperature TN decreases with increasing pressure with the rate of dTN/dP= -0.56K/kbar.

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