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Effect of pressure on the electrical resistivity and magnetization of CeScGe

  • Author(s): Uwatoko, Y;
  • Ishii, T;
  • Oomi, G;
  • Takahashi, H;
  • Mori, N;
  • Nimori, S;
  • Kido, G;
  • Sarrao, JL;
  • Mandrus, D;
  • Fisk, Z;
  • Thompson, JD
  • et al.

Published Web Location

https://doi.org/10.1016/s0921-4526(97)00101-4Creative Commons 'BY' version 4.0 license
Abstract

Measurement of the magnetization up to H = 30 T at 4.2 K, temperature dependence of magnetic susceptibility and effect of pressure on the electrical resistivity on CeScGe are presented. These results indicate that CeScGe is antiferromagnetic with TN = 46 K. The Néel temperature TN decreases with increasing pressure with the rate of dTN/dP= -0.56K/kbar.

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