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Effect of pressure on the electrical resistivity and magnetization of CeScGe
Abstract
Measurement of the magnetization up to H = 30 T at 4.2 K, temperature dependence of magnetic susceptibility and effect of pressure on the electrical resistivity on CeScGe are presented. These results indicate that CeScGe is antiferromagnetic with TN = 46 K. The Néel temperature TN decreases with increasing pressure with the rate of dTN/dP= -0.56K/kbar.
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