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Rectifying effect in boron nanowire devices

  • Author(s): Wang, D W
  • Otten, C J
  • Buhro, W E
  • Lu, Jia G
  • et al.
Abstract

It has been found that Ni forms ohmic contacts and Ti forms Schottky-barrier contacts to boron nanowires. Using two-step electron beam lithography, Ni and Ti electrodes are subsequently attached onto the ends of a single boron nanowire. As a result, a nanoscale rectifier is created using a boron nanowire.

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