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V-shaped inversion domains in InN grown on c-plane sapphire

  • Author(s): Jasinski, J.
  • Liliental-Weber, Z.
  • Lu, H.
  • Schaff, W.J.
  • et al.
Abstract

Inversion domains with a V-shape were found to nucleate inside a Mg-doped InN heteroepitaxial layer. They resemble Al-polarity domains, observed recently, in N-polarity AlN films. However, the angle between the side-walls of the V-shaped domain and the c-axis differs in these two cases. In InN, this angle is almost two times bigger than that reported for AlN. The origin of V-shaped inversion domains in InN film is not yet clear.

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