Lawrence Berkeley National Laboratory
V-shaped inversion domains in InN grown on c-plane sapphire
- Author(s): Jasinski, J.
- Liliental-Weber, Z.
- Lu, H.
- Schaff, W.J.
- et al.
Inversion domains with a V-shape were found to nucleate inside a Mg-doped InN heteroepitaxial layer. They resemble Al-polarity domains, observed recently, in N-polarity AlN films. However, the angle between the side-walls of the V-shaped domain and the c-axis differs in these two cases. In InN, this angle is almost two times bigger than that reported for AlN. The origin of V-shaped inversion domains in InN film is not yet clear.