Skip to main content
eScholarship
Open Access Publications from the University of California

Real-time observation of local strain effects on nonvolatile ferroelectric memory storage mechanisms

  • Author(s): Winkler, CR
  • Jablonski, ML
  • Ashraf, K
  • Damodaran, AR
  • Jambunathan, K
  • Hart, JL
  • Wen, JG
  • Miller, DJ
  • Martin, LW
  • Salahuddin, S
  • Taheri, ML
  • et al.

Published Web Location

https://doi.org/10.1021/nl501304e
Abstract

We use in situ transmission electron microscopy to directly observe, at high temporal and spatial resolution, the interaction of ferroelectric domains and dislocation networks within BiFeO3thin films. The experimental observations are compared with a phase field model constructed to simulate the dynamics of domains in the presence of dislocations and their resulting strain fields. We demonstrate that a global network of misfit dislocations at the film-substrate interface can act as nucleation sites and slow down domain propagation in the vicinity of the dislocations. Networks of individual threading dislocations emanating from the film-electrode interface play a more dramatic role in pinning domain motion. These dislocations may be responsible for the domain behavior in ferroelectric thin-film devices deviating from conventional Kolmogorov-Avrami-Ishibashi dynamics toward a Nucleation Limited Switching model. © 2014 American Chemical Society.

Many UC-authored scholarly publications are freely available on this site because of the UC Academic Senate's Open Access Policy. Let us know how this access is important for you.

Main Content
Current View