Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg
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Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg

  • Author(s): Kaminska, E.
  • Piotrowska, A.
  • Barcz, A.
  • Bour, D.
  • Zielinski, M.
  • Jasinski, J.
  • et al.
Abstract

We report on the formation of low resistivity ohmic contacts to p-GaN, rc<10-4Wcm2, by increasing the concentration of the active Mg in the subcontact zone, via Zr-mediated release of hydrogen.

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