Electron behavior in topological insulator based P-N overlayer interfaces
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Electron behavior in topological insulator based P-N overlayer interfaces

  • Author(s): Wray, LA
  • Neupane, M
  • Xu, S-Y
  • Xia, Y-Q
  • Fedorov, AV
  • Lin, H
  • Basak, S
  • Bansil, A
  • Hor, YS
  • Cava, RJ
  • Hasan, MZ
  • et al.
Abstract

Topological insulators (TIs) are novel materials that manifest spin-polarized Dirac states on their surfaces or at interfaces made with conventional matter. We have measured the electron kinetics of bulk doped TI Bi$_2$Se$_3$ with angle resolved photoemission spectroscopy while depositing cathodic and anodic adatoms on the TI surfaces to add charge carriers of the opposite sign from bulk dopants. These P-N overlayer interfaces create Dirac point transport regimes and larger interface potentials than previous N-N type surface deposition studies, revealing unconventional Rashba-like and surface-bulk electron interactions, and an unusual characteristic distribution of spectral weight near the Dirac point in TI Dirac point interfaces. The electronic structures of P-N doped topological interfaces observed in these experiments are an important step towards the understanding of solid interfaces with topological materials.

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