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Quantum Memristors with Superconducting Circuits.

  • Author(s): Salmilehto, J;
  • Deppe, F;
  • Di Ventra, M;
  • Sanz, M;
  • Solano, E
  • et al.

Published Web Location

https://doi.org/10.1038/srep42044
Abstract

Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. For realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.

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