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Optimization of surface passivation for suppressing leakage current in GaSb PIN devices

  • Author(s): Ji, Yihong
  • Advisor(s): Streit, Dwight C
  • et al.
Creative Commons 'BY-NC-ND' version 4.0 license
Abstract

The suppression of leakage current via surface passivation plays a critical role for GaSb based optoelectronic devices. In this study, the sulfur passivation parameters are carefully optimized in this study for improving the performance of GaSb p-i-n devices. Two competing processes are evaluated during the sulfur passivation process: the hydrolysis and oxidation of HS�- ions that aide surface passivation and re-oxidation, respectively. Upon the optimization of sulfur passivation parameters and subsequent encapsulation with ALD Al2O3, the surface resistivity significantly increased from 4.3kΩ∙cm to 28.6kΩ∙cm, leading to 19.1 times drop in dark current at room temperature for the GaSb p-i-n structure. This work provides a repeatable and stable passivation approach for improving the optoelectronic performance of GaSb based devices.

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