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Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.

  • Author(s): He, Junfeng;
  • Zhang, Chaofan;
  • Ghimire, Nirmal J;
  • Liang, Tian;
  • Jia, Chunjing;
  • Jiang, Juan;
  • Tang, Shujie;
  • Chen, Sudi;
  • He, Yu;
  • Mo, S-K;
  • Hwang, CC;
  • Hashimoto, M;
  • Lu, DH;
  • Moritz, B;
  • Devereaux, TP;
  • Chen, YL;
  • Mitchell, JF;
  • Shen, Z-X
  • et al.

Published Web Location

https://doi.org/10.1103/physrevlett.117.267201
Abstract

An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

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