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Open Access Publications from the University of California

Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.

  • Author(s): He, Junfeng;
  • Zhang, Chaofan;
  • Ghimire, Nirmal J;
  • Liang, Tian;
  • Jia, Chunjing;
  • Jiang, Juan;
  • Tang, Shujie;
  • Chen, Sudi;
  • He, Yu;
  • Mo, S-K;
  • Hwang, CC;
  • Hashimoto, M;
  • Lu, DH;
  • Moritz, B;
  • Devereaux, TP;
  • Chen, YL;
  • Mitchell, JF;
  • Shen, Z-X
  • et al.

An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

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