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Open Access Publications from the University of California

Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.

  • Author(s): He, Junfeng
  • Zhang, Chaofan
  • Ghimire, Nirmal J
  • Liang, Tian
  • Jia, Chunjing
  • Jiang, Juan
  • Tang, Shujie
  • Chen, Sudi
  • He, Yu
  • Mo, S-K
  • Hwang, CC
  • Hashimoto, M
  • Lu, DH
  • Moritz, B
  • Devereaux, TP
  • Chen, YL
  • Mitchell, JF
  • Shen, Z-X
  • et al.

An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

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