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A comparative transport study of Bi2Se3 and Bi2Se3/yttrium iron garnet

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http://scitation.aip.org/content/aip/journal/apl/104/22/10.1063/1.4881975
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Abstract

Bilayers of 20 quintuple layer Bi2Se3 on 30 nm thick yttrium iron garnet (YIG) have been grown with molecular beam epitaxy in conjunction with pulsed laser deposition. The presence of the ferri-magnetic insulator YIG causes additional scattering to the surface states of the Bi 2Se3 topological insulator layer, as indicated by the temperature dependence of the resistivity. From the two-channel analysis of the Hall data, we find that the surface contribution in the bilayer samples is greatly reduced. Furthermore, the weak antilocalization effect from the surface states is clearly suppressed due to the presence of the YIG layer. © 2014 AIP Publishing LLC.

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