Skip to main content
Open Access Publications from the University of California

UC Santa Barbara

UC Santa Barbara Previously Published Works bannerUC Santa Barbara

InGaAs/InP DHBTs with 120-nm Collector Having Simultaneously High ft,fmax > 450 GHz

  • Author(s): Griffith, Zach;
  • Rodwell, Mark;
  • Fang, Xiao-Ming;
  • Loubychev, Dmitri;
  • Wu, Ying;
  • Fastenau, Joel M.;
  • Liu, Amy W.K.
  • et al.

InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) have been designed for increased bandwidth digital and analog circuits, and fabricated using a conventional mesa structure. These devices exhibit a maximum 450 GHz f,tau and 490 GHz f,max, which is highest simultaneous f,tau and f,max for any HBT. The devices have been scaled vertically for reduced electron collector transit time and aggressively scaled laterally to minimize the base-collector capacitance associated with thinner collectors. The DC current gain beta is ~ 40 and BVCEO = 3.9 V. The devices operate up to 25 mW/um^2 dissipation (failing at Je = 10 mA/um^2, Vce = 2.5 V, delta T,failure = 301 K) and the there is no evidence of current blocking up to Je = 12 mA/um^2 at V,ce = 2.0 V from the base-collector grade. The devices reported here employ a 30 nm highly doped InGaAs base, and a 120 nm collector containing an InGaAs/InAlAs superlattice grade at the base-collector junction.

Many UC-authored scholarly publications are freely available on this site because of the UC's open access policies. Let us know how this access is important for you.

Main Content
For improved accessibility of PDF content, download the file to your device.
Current View