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Frequency dependent polarisation switching in h-ErMnO3

  • Author(s): Ruff, A
  • Li, Z
  • Loidl, A
  • Schaab, J
  • Fiebig, M
  • Cano, A
  • Yan, Z
  • Bourret, E
  • Glaum, J
  • Meier, D
  • Krohns, S
  • et al.

Published Web Location

https://doi.org/10.1063/1.5026732
Abstract

We report an electric-field poling study of the geometrically-driven improper ferroelectric h-ErMnO3. From a detailed dielectric analysis, we deduce the temperature and the frequency dependent range for which single-crystalline h-ErMnO3 exhibits purely intrinsic dielectric behaviour, i.e., free from the extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime, ferroelectric hysteresis loops as a function of frequency, temperature, and applied electric fields are measured, revealing the theoretically predicted saturation polarisation on the order of 5-6 μC/cm2. Special emphasis is put on frequency dependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics.

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