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Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide.

  • Author(s): Nemšák, Slavomír
  • Gehlmann, Mathias
  • Kuo, Cheng-Tai
  • Lin, Shih-Chieh
  • Schlueter, Christoph
  • Mlynczak, Ewa
  • Lee, Tien-Lin
  • Plucinski, Lukasz
  • Ebert, Hubert
  • Di Marco, Igor
  • Minár, Ján
  • Schneider, Claus M
  • Fadley, Charles S
  • et al.
Abstract

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

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