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Transistor and Circuit Design for 100-200 GHz ICs

  • Author(s): Griffith, Zach
  • Dong, Yingda
  • Scott, Dennis
  • Wei, Yun
  • Parthasarathy, Navin
  • Dahlstrom, Mattias
  • Kadow, Christoph
  • Paidi, Vamsi
  • Rodwell, Mark
  • Urteaga, Miguel
  • Pierson, Richard
  • Rowell, Petra
  • Brar, Bobby
  • Lee, Sangmin
  • Nguyen, Nguyen X
  • Nguyen, Chahn
  • et al.
Abstract

Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and parasitic reduction. Figures of merit for mixed-signal ICs are developed and HBT scaling laws introduced. Device and circuit results are summarized, including a simultaneous 450 GHz f,tau and 490 GHz f,max DHBT, 172 GHz amplifiers with 8.3-dBm output power and 4.5-dB associated power gain, and 150 GHz static frequency dividers (a digital circuit figure-of-merit for a device technology). To compete with advanced 100 nm SiGe processes, InP HBTs must be similarly scaled and high process yields are imperative. Described are several process modules in development -- these include an emitter-base dielectric sidewall spacer for increase yield, a collector pedestal implant for reduced extrinsic C,cb, and emitter regrowth for reduced base and emitter resistances.

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