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Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

  • Author(s): Liu, Y
  • Yuan, Y
  • Liu, F
  • Böttger, R
  • Anwand, W
  • Wang, Y
  • Semisalova, A
  • Ponomaryov, AN
  • Lu, X
  • N'Diaye, AT
  • Arenholz, E
  • Heera, V
  • Skorupa, W
  • Helm, M
  • Zhou, S
  • et al.
Abstract

© 2017 American Physical Society. Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties in d0 ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing. Magnetic moments are contributed by the p states of carbon atoms, but their magnetic circular dichroism is different from that in semi-insulating SiC samples. The anomalous Hall effect and negative magnetoresistance indicate the influence of d0 spin order on free carriers. The ferromagnetism is relatively weak in N-implanted SiC compared with that in Al-implanted SiC after annealing. The results suggest that d0 magnetic moments and itinerant carriers can interact with each other, which will facilitate the development of SiC spintronic devices with d0 ferromagnetism.

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