Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (112_0) 4H-SiC
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Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (112_0) 4H-SiC

  • Author(s): Zakharov, D.N.
  • Liliental-Weber, Z.
  • Wagner, B.
  • Reitmeier, Z.J.
  • Preble, E.A.
  • Davis, R.F.
  • et al.
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