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Fused InGaAs-Si Avalanche Photodiodes With Low-Noise Performances

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http://ieeexplore.ieee.org/iel5/68/22332/01042013.pdf?isnumber=22332&prod=JNL&arnumber=1042013&arSt=+1593&ared=+1595&arAuthor=Kang%2C+Y.%3B+Mages%2C+P.%3B+Clawson%2C+A.R.%3B+Yu%2C+P.K.L.%3B+Bitter%2C+M.%3B+Pan%2C+Z.%3B+Pauchard%2C+A.%3B+Hummel%2C+S.%3B+Lo%2C+Y.H.
Abstract

Afused InGaAs–Si avalanche photodiode (APD) with a low excess noise factor of 2.3 at a gain of 20 is reported. This corresponds to a k factor of 0.02 for the silicon avalanche region. Dark current density as low as 0.04 mA/cm2 at 5 V and 0.6 mA/cm2 at a gain of 10 are measured; a small thermal coefficient, 0.09%/degree C, of the breakdown voltage is observed for this APD.

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