Skip to main content
Open Access Publications from the University of California

MoS2transistors with 1-nanometer gate lengths

  • Author(s): Desai, SB
  • Madhvapathy, SR
  • Sachid, AB
  • Llinas, JP
  • Wang, Q
  • Ahn, GH
  • Pitner, G
  • Kim, MJ
  • Bokor, J
  • Hu, C
  • Wong, HSP
  • Javey, A
  • et al.

© 2016, American Association for the Advancement of Science. All rights reserved. Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ∼65 millivolts per decade and an On/Off current ratio of ∼106. Simulations show an effective channel length of ∼3.9 nm in the Off state and ∼1 nm in the On state.

Many UC-authored scholarly publications are freely available on this site because of the UC Academic Senate's Open Access Policy. Let us know how this access is important for you.

Main Content
Current View