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MoS2transistors with 1-nanometer gate lengths

  • Author(s): Desai, SB
  • Madhvapathy, SR
  • Sachid, AB
  • Llinas, JP
  • Wang, Q
  • Ahn, GH
  • Pitner, G
  • Kim, MJ
  • Bokor, J
  • Hu, C
  • Wong, HSP
  • Javey, A
  • et al.
Abstract

© 2016, American Association for the Advancement of Science. All rights reserved. Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ∼65 millivolts per decade and an On/Off current ratio of ∼106. Simulations show an effective channel length of ∼3.9 nm in the Off state and ∼1 nm in the On state.

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