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MoS2 transistors with 1-nanometer gate lengths.

  • Author(s): Desai, Sujay B;
  • Madhvapathy, Surabhi R;
  • Sachid, Angada B;
  • Llinas, Juan Pablo;
  • Wang, Qingxiao;
  • Ahn, Geun Ho;
  • Pitner, Gregory;
  • Kim, Moon J;
  • Bokor, Jeffrey;
  • Hu, Chenming;
  • Wong, H-S Philip;
  • Javey, Ali
  • et al.
Abstract

Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~106 Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state.

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