Lawrence Berkeley National Laboratory

In the present paper the evolution of the dislocation structure during electromigration in different regions along the Al(Cu) interconnect line is considered. It is shown that plastic deformation increases in the regions close to cathode end of the interconnect line. A coupling between the dissolution, growth and re-precipitation of Al2Cu precipitates and the electromigration-induced plastic deformation of grains in interconnects is observed. Possible mechanism of the Cu doping effect on the improved electromigration resistance of the Al(Cu) interconnects is discussed.