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Effect of growth induced (non)stoichiometry on interfacial conductance in LaAlO3/SrTiO3.

  • Author(s): Breckenfeld, E
  • Bronn, N
  • Karthik, J
  • Damodaran, AR
  • Lee, S
  • Mason, N
  • Martin, LW
  • et al.
Abstract

We demonstrate a link between the growth process, the stoichiometry of LaAlO(3), and the interfacial electrical properties of LaAlO(3)/SrTiO(3) heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1×10(-3) Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility. We discuss the relative contributions of intrinsic and extrinsic effects in controlling the physical properties of this widely studied system.

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