Effect of growth induced (non)stoichiometry on interfacial conductance in LaAlO3/SrTiO3
- Author(s): Breckenfeld, E
- Bronn, N
- Karthik, J
- Damodaran, AR
- Lee, S
- Mason, N
- Martin, LW
- et al.
Published Web Locationhttps://doi.org/10.1103/PhysRevLett.110.196804
We demonstrate a link between the growth process, the stoichiometry of LaAlO3, and the interfacial electrical properties of LaAlO3/SrTiO3heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1×10-3 Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility. We discuss the relative contributions of intrinsic and extrinsic effects in controlling the physical properties of this widely studied system. © 2013 American Physical Society.
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