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Interlayer electron-phonon coupling in WSe 2/hBN heterostructures

  • Author(s): Jin, C
  • Kim, J
  • Suh, J
  • Shi, Z
  • Chen, B
  • Fan, X
  • Kam, M
  • Watanabe, K
  • Taniguchi, T
  • Tongay, S
  • Zettl, A
  • Wu, J
  • Wang, F
  • et al.

Published Web Location

https://doi.org/10.1038/nphys3928
Abstract

Engineering layer-layer interactions provides a powerful way to realize novel and designable quantum phenomena in van der Waals heterostructures. Interlayer electron-electron interactions, for example, have enabled fascinating physics that is difficult to achieve in a single material, such as the Hofstadter's butterfly in graphene/boron nitride (hBN) heterostructures. In addition to electron-electron interactions, interlayer electron-phonon interactions allow for further control of the physical properties of van der Waals heterostructures. Here we report an interlayer electron-phonon interaction in WSe 2 /hBN heterostructures, where optically silent hBN phonons emerge in Raman spectra with strong intensities through resonant coupling to WSe 2 electronic transitions. Excitation spectroscopy reveals the double-resonance nature of such enhancement, and identifies the two resonant states to be the A exciton transition of monolayer WSe 2 and a new hybrid state present only in WSe 2 /hBN heterostructures. The observation of an interlayer electron-phonon interaction could open up new ways to engineer electrons and phonons for device applications.

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