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Enhancement of Ferroelectric Curie Temperature in BaTiO3 Films via Strain‐Induced Defect Dipole Alignment

Published Web Location

https://doi.org/10.1002/adma.201400254
Abstract

The combination of epitaxial strain and defect engineering facilitates the tuning of the transition temperature of BaTiO3 to >800 °C. Advances in thin-film deposition enable the utilization of both the electric and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented functionality and temperature stability in ferroelectrics.

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