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Enhancement of ferroelectric Curie temperature in BaTiO3 films via strain-induced defect dipole alignment.

  • Author(s): Damodaran, Anoop R
  • Breckenfeld, Eric
  • Chen, Zuhuang
  • Lee, Sungki
  • Martin, Lane W
  • et al.
Abstract

The combination of epitaxial strain and defect engineering facilitates the tuning of the transition temperature of BaTiO3 to >800 °C. Advances in thin-film deposition enable the utilization of both the electric and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented functionality and temperature stability in ferroelectrics.

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