Enhancement of ferroelectric Curie temperature in BaTiO3 films via strain-induced defect dipole alignment.
- Author(s): Damodaran, Anoop R
- Breckenfeld, Eric
- Chen, Zuhuang
- Lee, Sungki
- Martin, Lane W
- et al.
Published Web Locationhttps://doi.org/10.1002/adma.201400254
The combination of epitaxial strain and defect engineering facilitates the tuning of the transition temperature of BaTiO3 to >800 °C. Advances in thin-film deposition enable the utilization of both the electric and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented functionality and temperature stability in ferroelectrics.