Skip to main content
eScholarship
Open Access Publications from the University of California

Very high voltage operation (> 330 V) with high current gain of AlGaN/GaN HBTs

  • Author(s): Xing, Huili G.
  • Chavarkar, P M
  • Keller, S
  • DenBaars, S P
  • Mishra, U K
  • et al.
Abstract

N-p-n Al0.05GaN/GaN heterojunction bipolar transistors with a common emitter operation voltage higher than 330 V have been demonstrated using selectively regrown emitters. Devices were grown by metalorganic chemical vapor deposition on sapphire substrates. The n-type emitter was grown selectively on a 100-nm-thick p-base with an 8 mum n-collector structure using a dielectric mask. The shallow etch down to the collector mitigates damages induced in the dry etch, resulting a low leakage and a high breakdown. The graded AlGaN emitter results in a common emitter current gain of similar to18 at an average collector current density of up to 1 kA/cm(2) at room temperature.

Many UC-authored scholarly publications are freely available on this site because of the UC Academic Senate's Open Access Policy. Let us know how this access is important for you.

Main Content
Current View