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Very high voltage operation (> 330 V) with high current gain of AlGaN/GaN HBTs

  • Author(s): Xing, Huili G.
  • Chavarkar, P M
  • Keller, S
  • DenBaars, S P
  • Mishra, U K
  • et al.
Abstract

N-p-n Al0.05GaN/GaN heterojunction bipolar transistors with a common emitter operation voltage higher than 330 V have been demonstrated using selectively regrown emitters. Devices were grown by metalorganic chemical vapor deposition on sapphire substrates. The n-type emitter was grown selectively on a 100-nm-thick p-base with an 8 mum n-collector structure using a dielectric mask. The shallow etch down to the collector mitigates damages induced in the dry etch, resulting a low leakage and a high breakdown. The graded AlGaN emitter results in a common emitter current gain of similar to18 at an average collector current density of up to 1 kA/cm(2) at room temperature.

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