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High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding

  • Author(s): Bahk, Je-Hyeong
  • Zeng, Gehong
  • Zide, Joshua M.
  • Lu, Hong
  • Singh, Rajeev
  • Liang, Di
  • Ramu, Ashok T.
  • Burke, Peter
  • Bian, Zhixi
  • Gossard, Arthur C.
  • Shakouri, Ali
  • Bowers, John E.
  • et al.
Abstract

A device fabrication and measurement method utilizing a SiO2–SiO2 covalent bonding technique is presented for high-temperature thermoelectric characterization of thin-film III–V semiconductor materials that suffer from the side-effect of substrate conduction at high temperatures. The proposed method includes complete substrate removal, high-temperature surface passivation, and metallization with a Ti-W-N diffusion barrier. A thermoelectric material, thin-film ErAs:InGaAlAs metal/semiconductor nanocomposite grown on a lattice-matched InP substrate by molecular beam epitaxy, was transferred onto a sapphire substrate using the oxide bonding technique at 300°C, and its original InP substrate, which is conductive at high temperatures, was removed. Electrical conductivities and Seebeck coefficients were measured from room temperature to 840 K for this material on both the InP and sapphire substrates, and the measurement results clearly show that the InP substrate effect was eliminated for the sample on the sapphire substrate. A strain experiment has been conducted to investigate the effect of strain on electrical conductivity.

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