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Barrier-free contact to MoS2 transistor and the transport properties of its localized states

  • Author(s): Wu, Hao
  • Advisor(s): Huang, Yu
  • et al.
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Abstract

The two-dimensional layered materials such as molybdenum disulfide (MoS2) have attracted tremendous interest as a new class of electronic materials. However, there are considerable challenges in replacing silicon with two-dimensional materials to build large-scale integrated circuits in the semiconductor industry. The commercialization of two-dimensional layered materials requires further enhancement of the electronic device performance. Therefore, the reliable device contact and the carrier transport are significantly important. Here I would present a new protocol to make barrier-free contact to MoS2 transistor and the carrier transport studies based on the barrier-free MoS2 transistors.

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This item is under embargo until January 19, 2020.