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High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy

  • Author(s): Hudait, M K
  • Lin, Y
  • Wilt, D M
  • Speck, J S
  • Tivarus, C A
  • Heller, E R
  • Pelz, J P
  • Ringel, S A
  • et al.
Abstract

Relaxed, high-quality, compositionally step-graded InAsyP1-y layers with an As composition of y=0.4, corresponding to a lattice mismatch of similar to1.3% were grown on InP substrates using solid-source molecular-beam epitaxy. Each layer was found to be nearly fully relaxed observed by triple axis x-ray diffraction, and plan-view transmission electron microscopy revealed an average threading dislocations of 4x10(6) cm(-2) within the InAs0.4P0.6 cap layer. Extremely ordered crosshatch morphology was observed with very low surface roughness (3.16 nm) compared to cation-based In0.7Al0.3As/InxAl1-xAs/InP graded buffers (10.53 nm) with similar mismatch and span of lattice constants on InP. The results show that InAsyP1-y graded buffers on InP are promising candidates as virtual substrates for infrared and high-speed metamorphic III-V devices. (C) 2003 American Institute of Physics.

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