Skip to main content
Open Access Publications from the University of California

UC Berkeley

UC Berkeley Previously Published Works bannerUC Berkeley

3D multilevel spin transfer torque devices

Published Web Location

Spin-transfer torque magnetic tunneling junction devices capable of a multilevel three-dimensional (3D) information processing are studied in the sub-20-nm size range. The devices are built using He+ and Ne+ focused ion beam etching. It has been demonstrated that due to their extreme scalability and energy efficiency, these devices can significantly reduce the device footprint compared to the modern CMOS approaches and add advanced features in a 3D stack with a sub-20-nm size using a spin polarized current.

Many UC-authored scholarly publications are freely available on this site because of the UC's open access policies. Let us know how this access is important for you.

Main Content
For improved accessibility of PDF content, download the file to your device.
Current View